OSFDPACL EXP No: 11 Characteristics of Gunn Diode Oscillator PPT скачать в хорошем качестве

OSFDPACL EXP No: 11 Characteristics of Gunn Diode Oscillator PPT

Welcome to the Online Spoken Faculty Development Program on Advanced Communication Laboratory Organized by the Department of ECE, PSNA College of Engineering and Technology, Dindigul - 624622, Tamilnadu, India. In this video course instructor, Mr.R.Sathesh Raaj Assistant Professor/ECE elaborates Experiment No 11 Characteristics of Gunn Diode Oscillator. The Gunn diode is al so-called transferred electron device. Electrons are transferred from one valley in the conduction band to another valley. They are ideally suited for use in low noise sources such as local oscillators, locking oscillators, low and medium power transmitter applications, and motion detection systems. Higher power varieties can be used in phase-locked oscillators or as reflection amplifiers in point-to-point communication links and telemetry systems. Usually, the Gunn diode is mounted on a post structure between the waveguide walls, either half guide wavelength from an iris or half guide wavelength from a short circuit. Tuning screws are used to modify the cavity resonant frequency. This experiment also discusses the characteristics behavior of Gunn diode oscillator.