Temperature Inversion in VLSI | Cell Delay variation with Temperature скачать в хорошем качестве

Temperature Inversion in VLSI | Cell Delay variation with Temperature

In this video tutorial, we have discussed the Temperature Inversion in VLSI. How the cell delay changes with temperature in the higher technology node and lower technology node. In this session we have basically discussed: 1:16 1. PVT corner for setup 1:40 2. Cell delay variation trend with Process, Voltage and Temperature 2:50 3. Cell delay variation with temperature in higher technology and lower technology node 5:28 4. The relation between drain current and cell delay 7:44 5. The relation between mobility and temperature 9:05 6. The relation between delay and temperature due to mobility 9:55 7. The relation of threshold voltage with temperature 12:50 8. The relation between delay and temperature due to Threshold voltage 13:55 9. Why mobility is dominating at higher technology node and threshold voltage is dominating at lower technology node 18:06 10. A sample answer for interview This series is focused on short topics for VLSI Interview questions. If you feel this video is relevant to your domain and useful, please like the video and subscribe to this channel. Your queries/suggestions are most welcome in the comment section. ------------------------------------------------------------------------------ Connect with us All on one page: https://www.teamvlsi.com/p/contact_8.... Blog: https://www.teamvlsi.com Facebook Page:   / teamvlsi   WhatsApp Group: https://chat.whatsapp.com/C6etLHR6oAf... Telegram Group: https://t.me/teamvlsi (Or search team VLSI on telegram) Email: teamvlsi2014@gmail.com #TemperatureInversion #VtVsTemperature #MobilityVsTemperature