Prof. Nidhin Kalarickal (ASU) Gallium Oxide for Next Generation Power Switching and RF Electronics скачать в хорошем качестве

Prof. Nidhin Kalarickal (ASU) Gallium Oxide for Next Generation Power Switching and RF Electronics

Talk Title: Gallium Oxide for Next Generation Power Switching and RF Electronics Talk Date: 18th April 2025 Abstract: Beta-Gallium oxide (-Ga2O3), an emerging ultra-wide bandgap semiconductor, is gaining significant attention for its potential to enable the next generation of high-power and high-frequency electronic devices. Its ultra-wide bandgap (~4.8 eV) and high critical electric field (greater than 8 MV/cm) enable theoretical performance metrics such as the Baliga’s figure of merit and Johnson’s figure of merit, that significantly exceed those of incumbent materials like SiC and GaN. These properties make -Ga2O3 a compelling candidate for applications in electric vehicles, renewable energy transmission, high-speed communication systems, and data center power delivery. Furthermore, the availability of cost-effective melt-grown substrates offers scalability of the technology positioning -Ga2O3) as a disruptive material for power electronics, offering a theoretical Baliga figure of merit that surpasses that of SiC and GaN. Nevertheless, critical challenges remain, including its inherently low thermal conductivity, absence of native p-type doping, and the need for robust, high-efficiency field termination strategies. This talk will present recent advances in -Ga2O3 based power and RF devices at ASU, highlighting novel approaches for device processing such as damage-free etching using metal-organic precursors, capable of simultaneously achieving high etch rates, and smooth vertical sidewalls. We will also discuss advances in vertical high-voltage devices incorporating sputtered p-NiO/Ga2O3 heterojunctions which have demonstrated low turn-on voltages and high breakdown fields. Additionally, high efficiency edge termination strategies for vertical Ga2O3 devices using the same heterojunctions will be discussed. The talk will also explore our recent efforts to advance -Ga2O3 RF/mm-wave devices specifically focused on design and engineering of sub-micron lateral FinFETs capable of modulating high channel charge densities. Speaker Bio: Dr. Nidhin Kurian Kalarickal is an assistant professor in the School of Electrical, Computer and Energy Engineering at Arizona State University. He earned his PhD in Electrical and Computer Engineering from The Ohio State University in 2022, where his research centered on plasma-assisted MBE growth of -(AlxGa1-x)2O3/ Ga2O3 heterostructures and the development of -Ga2O3 high-voltage transistors. Prior to his time at Ohio State, Dr. Kalarickal completed both his bachelor's and master's degrees in Materials Science, with a minor in Physics, at the Indian Institute of Science, Bangalore. His research at ASU focuses on wide and ultra-wide bandgap semiconductors and devices for power electronics and RF/mm-wave applications. He is a recipient of the 2019 NAMBE Best Paper Award and the Presidential Fellowship at Ohio State. At ASU, he currently leads the Ultra-Wide Band Gap RF Center, supported by the Army Research Office. About EDS: The Electron Devices Society (EDS) at Cornell is a student-run faculty-guided seminar series. We cover grounds on electronic, photonic and quantum devices, and deal with topics covering epitaxy, nanofabrication and novel measurement techniques. Our attendees typically include graduate students, faculty and staff members from the Electrical and Computer Engineering, Material Science and Engineering and Applied & Engineering Physics Departments.