ROHM SiC Schottky Barrier Diodes скачать в хорошем качестве

ROHM SiC Schottky Barrier Diodes

Design with few components and significantly reduce power loss in Inverters https://www.futureelectronics.com/sea... Silicon, the mainstay of electronics for over 50 years is reaching the limits of its performance spectrum particularly in the power arena. While the demise of Silicon has been predicted before there are now a variety of technologies emerging in the power market! One of these is Silicon Carbide which offers: • Lower Forward Voltage (1.35V) [Diode] • Faster Recovery Times (13ns) [Diode] • Low On-Resistance (80mΩ) [MOSFET] • Higher Temperature Operation (up to 175Deg) • Low Switching Losses even at High Frequencies These features give optimized power performance enabling you to design with fewer components and significantly reduce power loss in many power topologies.