14 Semiconductor NCERT Board Case Base Questions Video 1 скачать в хорошем качестве

14 Semiconductor NCERT Board Case Base Questions Video 1

Semiconductor NCERT Board Case Base Questions, This video covers NCERT Board Case-Based Questions from Semiconductor Electronics for Class 12 Physics (CBSE). You will learn how to solve assertion-based and passage-based questions exactly as asked in board exams. 🔹 Topics covered: • Intrinsic & Extrinsic Semiconductors • P-type & N-type Semiconductors • PN Junction Diode • Voltage Regulation • Semiconductor devices – exam-oriented concepts, Time line : 00:00 Question-1 A silicon p-n junction diode is connected to a resistor R and a battery of voltage VB through a milliammeter mA as shown in figure. The knee voltage for this junction diode is VN = 0.7 V. The p-n junction diode requires a minimum current of 1 mA to attain a value higher than the knee point on the I-V characteristics of this junction diode. Assuming that the voltage V across the junction is independent of the current above the knee point. 03:48 Question-2 Rectifier is a circuit which converts ac to unidirectional pulsating dc output or we can say that it converts ac to dc. It working is based on the fact that the resistance of p n junction becomes low when forward biased and becomes high when reverse biased. There are two types of rectifier 07:23 Question-3 Motions of the Charge Carriers: If you burst a helium-filled balloon, helium atoms will diffuse spread outward into the surrounding air. This happens because these are very few helium atoms in normal air. In more formal language, there is a helium density gradient at the balloon-air interface the number density of helium atoms varies across the interface, the helium atoms move so as to reduce the gradient. 10:28 Question-4 When the diode is forward biased, it is found that beyond forward voltage V = V k , called knee voltage, the conductivity is very high. At this value of battery biasing for p-n junction, the potential barrier is overcome and the current increases rapidly with increase in forward voltage. When the diode is reverse biased, the reverse bias voltage produces a very small current about a few microamperes which almost remains constant with bias. This small current is reverse saturation current. 13:52 Question-5 The circuit arrangement for studying the V-I characteristics of a diode, i.e., the variation of current as a function of applied voltage are shown in Fig. a and b. The battery is connected to diode through a potentiometer or rheostat so thot the applied voltage to the diode can be changed. For different values of voltages, the value of the current is noted. A graph between V and I is obtained as in Fig c. Note that in forward bias measurement, we use a milliammeter since the expected current is large while a microammeter is used in reverse bias to measure the current. 16:10 Question-6 The potential barrier in the p-n junction diode is the barrier in which the charge requires additional force for crossing the region. In other words, the barrier in which the charge carrier stopped by the obstructive force is known as the potential barrier. When a p-type semiconductor is brought into a close contact with n-type semiconductor