[CMP Part5] Post-CMP Cleaning & Defect (1 of 2) скачать в хорошем качестве

[CMP Part5] Post-CMP Cleaning & Defect (1 of 2)

Welcome back, Silicon Pioneers! I’m your guide, Semi Sherpa, and today, we’re concluding our deep dive into CMP with a crucial topic—post-CMP cleaning and defect management. This final step in the CMP process plays a decisive role in ensuring high-yield semiconductor manufacturing by effectively removing residual particles and preventing unwanted defects. This is Episode 5 in our CMP series. In Episode 1, we introduced the importance of CMP in semiconductor fabrication. Episode 2 covered the mechanics behind CMP, while Episode 3 explored the key consumables. Episode 4 focused on CMP slurry and its polishing mechanisms. Now, in this final episode, we turn our attention to post-CMP cleaning, where advanced cleaning techniques safeguard wafer surfaces from particle contamination and non-removable defects. Today’s episode is structured into two main sections, each designed to provide a clear and practical understanding of post-CMP cleaning. We’ll begin by tracing the evolution of post-CMP cleaning, from early dry-in, wet-out methods to modern dry-in, dry-out and integrated all-in-one systems. Along the way, we’ll categorize the types of defects that can and cannot be removed through cleaning. Next, we’ll explore the mechanisms of particle removal, covering the fundamental forces that cause particles to adhere to the wafer and the key principles—DLVO theory, electric double layer, and zeta potential—that govern their detachment. We’ll then break down the post-CMP cleaning process, examining chemical cleaning based on the RCA procedure, as well as essential physical cleaning techniques like brush scrubbing, megasonic cleaning, jet spray cleaning, and buff cleaning. The final sections will present case studies on post-CMP cleaning for silicon oxide, tungsten, and copper CMP, followed by an analysis of non-removable defects such as scratches and metal corrosion. We’ll discuss their root causes and how to mitigate these persistent issues. This episode is designed to give you a practical yet insightful understanding of post-CMP cleaning in high-volume semiconductor manufacturing. While chemistry plays a significant role, we’ve kept complex equations to a minimum, ensuring accessibility for all Silicon Pioneers. Thanks for joining us on this journey through CMP! If you’re ready to explore today’s topics in depth, check out the timestamps below. 1. Post CMP (PCMP) Cleaning [03:10] Integration of Post-CMP Cleaning in Modern Tools: A Historical Perspective [07:12] Key Defects in CMP and the Importance of Cleaning 2. Particle Removal Mechanism [11:40] Particle Removal Mechanisms in Post-CMP Cleaning [15:13] DLVO-Based Strategies for Efficient Post-CMP Particle Removal [18:50] Understanding Van der Waals Interactions in Particle Removal [22:15] Understanding Electrostatic Interactions in Particle Removal 3. PCMP Cleaning Process [31:02] RCA Cleaning and Beyond: Tackling Modern Post-CMP Challenges [36:03] Understanding SC1 in Post-CMP Cleaning: Mechanisms and Challenges [42:16] The Role of Physical Cleaning in Enhancing Post-CMP Particle Removal [47:43] Enhancing Post-CMP Particle Removal with Brush Scrubbing Technology [55:34] Enhancing Post-CMP Particle Removal with Megasonic Cleaning Technology [1:05:35] Enhancing Post-CMP Particle Removal with Jet Spray Cleaning [1:10:48] Enhancing Post-CMP Particle Removal with Buff Clean 4. Case Study: SiO2, W, Cu 5. CMP Defect: Scratch 6. CMP Defect: Metal Corrosion