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Titled: EVOLUTION OF THE ELECTRONIC STRUCTURE OF ULTRATHIN FILMS OF INTRINSIC MAGNETIC TOPOLOGICAL INSULATOR MnBi2Te4 Absract: Intrinsic magnetic topological insulator MnBi2Te4, after been exfoliated to atomically thin film and electrostatically gated, exhibits rich and fascinating quantum properties such as quantum anomalous Hall effectand axion insulator state. However, despite these great breakthroughs, there are still many mysteriesin the electronic structure of MnBi2Te4to be understood. Particularly, the electronic structures of MnBi2Te4films are still not sufficiently investigated. In this talk, we will show our ARPES studies on the electronic structure of MnBi2Te4film and bulk material as well as their evolution with temperature, film thickness, and surface doping of alkali metals. With increasing film thickness, the electronic structure changes from an insulator type with a large energy gap to one with in-gap topological surface states, which is, however, still in drastic contrast to the bulk material. By surface doping of alkali-metal atoms, a Rashba split band gradually emerges and hybridizes with topological surface states, which not only reconciles the puzzling difference between the electronic structures of the bulk and thin-film MnBi2Te4but also provides an interesting platform to establish Rashba ferromagnet that is attractive for (quantum) anomalous Hall effect. References: [1]Y.J. Chen et al., Phys. Rev. X 9, 041040 (2019). [2]R.Z. Xu et al., Nano Lett. 22, 6320 (2022).[3]A.J. Liang et al., Nano Lett. 22, 4307 (2022).