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Overcoming Atomic Level Impurities in GAA Designs

Gate-All-Around (GAA) technologies are redefining advanced semiconductor manufacturing — but atomic‑level contamination is now one of the biggest hidden threats to yield, power efficiency, and time‑to‑market. In this short video, we break down why traditional cleaning methods can’t protect fragile GAA nanosheets — and how Low‑Temperature Ultra‑High Vacuum (UHV) preparation eliminates interface defects before they ever form. 🔍 Key topics covered: Why GAA atomic-level contamination destroys yield The limits of wet clean and plasma for nanosheets How UHV surface preparation enables defect‑free epitaxy and ALD The financial impact: higher yield, better binning, stronger margins Learn why atomic‑level purity is now a business-critical requirement for advanced nodes — and how SisuSemi helps fabs unlock millions in recovered value.