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Abstract: We review the origins, evolution and present status of MOSFETs, which has been the dominant semiconductor device for more than 4 decades. The conceptual invention of MOSFET, by Lilienfeld in 1928, and the end of World War II, in 1945, inspired Bell Labs to research into semiconductors. Bardeen and Brattain, fabricated the first point contact transistor in December 1947. This achievement motivated Shockley to invent the bipolar junction transistor in January 1948. Bardeen, Brattain and Shockley received the Nobel Prize in 1956 “for their discovery of the transistor effect.” After solving oxide reliability problems, the MOSFET was fabricated in 1960 by Kahng and Atalla. The invention of CMOS, by Wanlass and Sah in 1963, made the MOSFET to be the most used device in digital applications. The transistors have been miniaturized for more than fifty years, following Moore’s Law from 1965, and they are now approaching their final limits in the nanometer regime. New device designs as FinFETS, Nanowire and Nanosheet are now being fabricated.