IGBTs vs Silicon Carbide (SiC) - Thomas Hauer & Electropages | Powering the Shift скачать в хорошем качестве

IGBTs vs Silicon Carbide (SiC) - Thomas Hauer & Electropages | Powering the Shift

Avnet Silica's resident Power expert sat down with Robin Mitchell of Electropages to look at the comparison between Insulated Gate Bipolar Transistors (IGBTs) and Silicon Carbide (SiC) devices for power electronics applications. IGBTs, a mature technology, are known for their high current handling capabilities but suffer from limitations like knee voltage and slower switching speeds. SiC devices, on the other hand, offer advantages such as faster switching speeds, higher efficiency, and better thermal performance. The discussion highlights the increasing popularity of SiC devices, especially in applications like electric vehicles, where their ability to handle high power densities and operate at higher frequencies is crucial. However, challenges associated with SiC devices, such as gate drive complexity and potential for increased electromagnetic interference (EMI), need to be carefully considered. The video concludes by emphasizing the importance of selecting the right technology based on specific application requirements and trade-offs between performance, cost, and reliability. Head over to our website to see Avnet Silica's power solutions and capabilities: https://my.avnet.com/silica/solutions...