An Ultrafast Active Quenching Circuit for SPAD in CMOS 28nm FDSOI Technology скачать в хорошем качестве

An Ultrafast Active Quenching Circuit for SPAD in CMOS 28nm FDSOI Technology

Sponsored by IEEE Sensors Council (https://ieee-sensors.org/) Title: An Ultrafast Active Quenching Circuit for SPAD in CMOS 28nm FDSOI Technology Author: Mohammadreza Dolatpoor Lakeh{2}, Jean-Baptiste Kammerer{2}, Wilfried Uhring{2}, Jean-Baptiste Schell{2}, Francis Calmon{1} Affiliation: {1}Université de Lyon, Institut des Nanotechnologies de Lyon, UMR CNRS 5270, France; {2}University of Strasbourg, ICube Laboratory, France Abstract: A very fast Active Quenching-Active Reset Circuit is proposed for the afterpulsing reduction in a Single Photon Avalanche Diode (SPAD). The proposed circuit is designed in a 28 nm CMOS FDSOI (Fully Depleted Silicon On Insulator) technology which takes benefit from the Body Biasing. By means of a very fast detection circuit, the avalanche is detected in just 27 ps. The fast detection results in a quenching time of less than 210 ps with a 46% reduction of the charge involved in the avalanche process. This reduction in the avalanche charge should strongly reduce the afterpulsing effect. IEEE Sensors Conferences (https://ieee-sensors.org/conferences/) IEEE Sensors Journal (https://ieee-sensors.org/sensors-jour...) IEEE Sensors Letters (https://ieee-sensors.org/sensors-lett...) IEEE Internet of Things Journal (https://ieee-iotj.org/) IEEE SENSORS conference proceedings (https://ieeexplore.ieee.org/xpl/conho...)