MATLAB Modeling of High Power GaN PIN Diodes 🔋 | GaN Diode Breakdown Voltage Simulation 🧑‍💻🧬📈 скачать в хорошем качестве

MATLAB Modeling of High Power GaN PIN Diodes 🔋 | GaN Diode Breakdown Voltage Simulation 🧑‍💻🧬📈

In today’s video, we’re diving deep into the breakdown voltage of GaN PIN diodes—one of the most crucial factors in high-power electronics! 🛠️⚡ We’ll be using MATLAB to model how doping levels, depletion width, and impact ionization all play a role in determining the breakdown voltage. If you're into semiconductor design 🧑‍💻💡 or just curious about GaN technology, this is the perfect place to explore! We'll walk you through the MATLAB code and break down key characteristics like depletion width, breakdown voltage, and on-resistance across various doping concentrations, giving you a comprehensive view of how these diodes perform in high-power applications. 🚀 But let’s not stop there! 🤓 GaN (Gallium Nitride) is revolutionizing the world of high-power devices due to its wide bandgap 🧬, allowing it to handle higher voltages and temperatures compared to traditional silicon-based semiconductors. 🌡️ In this video, we'll show you how the physical principles of impact ionization and depletion region widths directly affect the performance of these powerful devices 💥—giving you the knowledge to design your own high-efficiency diodes in the future. 🔧📊 🔍 Join us as we connect the physical principles of GaN material properties to practical modeling techniques. By the end, you'll have a solid understanding of how to simulate GaN high-power PIN diodes and interpret the results! 📈 🔗 Don’t forget to like, subscribe, and hit that notification bell 🔔 to stay updated on all things semiconductor design and tech!