Commercial Production of Low-K PZT Film Using Sputtering Method скачать в хорошем качестве

Commercial Production of Low-K PZT Film Using Sputtering Method

Sponsored by IEEE Sensors Council (https://ieee-sensors.org/) Title: Commercial Production of Low-K PZT Film Using Sputtering Method Author: Mario Kiuchi{1}, Ryoma Miyake{1}, Shinya Yoshida{2}, Shuji Tanaka{2}, Tsuyoshi Takemoto{1}, Yukitaka Yamaguchi{1}, Kenji Komaki{1} Affiliation: {1}Sumitomo Precision Products Co., Ltd., Japan; {2}Tohoku University, Japan Abstract: Monocrystalline-like epitaxial PZT films for commercial use are described for piezoelectric MEMS applications. The composition ratios of Zr and Ti in the films are Morphotropic phase boundary (52:48) and Ti rich (42:58). The films with a thickness of 1 μm to 2 μm exhibit typical transverse piezoelectric d31 coefficients of -185 pm/V and -149 pm/V, respectively. Relative dielectric permittivities are 430 and 264. Dielectric losses are 0.015 and 0.020. Both of films of figure-of-merit for MEMS device are more than 50 GPa. These films are commercially available for piezoelectric MEMS device development and production. IEEE Sensors Conferences (https://ieee-sensors.org/conferences/) IEEE Sensors Journal (https://ieee-sensors.org/sensors-jour...) IEEE Sensors Letters (https://ieee-sensors.org/sensors-lett...) IEEE Internet of Things Journal (https://ieee-iotj.org/) IEEE SENSORS conference proceedings (https://ieeexplore.ieee.org/xpl/conho...)