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Take a closer look at Samsung's next-gen AI memory, HBM4, through - by the numbers! As the generative AI advances, demand for ultra-high-performance memory to handle exploding data has never been greater. Compared with HBM3E, Samsung HBM4 delivers significant advances in speed, capacity, and power efficiency. Let's dive into the key numbers that define Samsung HBM4: 📊Samsung HBM4 Core Specs by the Numbers • 3.3 TB/s Bandwidth: Incredible data processing speed capable of transferring 750 4GB movies in just 1 second (~2.7x improvement). • 2,048 I/O Pins: Unmatched performance that doubles the data highway to drastically reduce bottlenecks. • 12-High Stacking: Combining a 4nm foundry logic base die with 1c DRAM for up to 36GB capacity (with plans to expand to 16-high). • 40% Better Energy Efficiency: Advanced Packaging technology that boosts heat dissipation by 30%, keeping temperatures low and dramatically cutting power consumption. Witness the innovation of Samsung HBM4, built with ultra-fine processing and advanced packaging technologies, right here in the video! 📌Timestamps 0:00 HBM4 by the Numbers 0:14 4nm Foundry & 1c DRAM Core Die Structure 0:24 TSV & Advanced Packaging (12-High to 16-High) 0:48 Doubled I/O Pins (vs. HBM3E) 0:55 Upgraded Operating Speed & Bandwidth 1:16 HBM4’s Enhanced Efficiency (Energy/Thermal) 1:23 The World's First HBM4 #Samsung #HBM4 #AIMemory #Foundry #DRAM #AdvancedPackaging #TSV #Tech #ByTheNumbers