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Samsung Electronics announced its demonstration of the world's first in-memory computing based on MRAM (Magnetoresistive Random Access Memory). The paper on this innovation was published online by Nature on January 12 (GMT), and is set to be published in the upcoming print edition of Nature. Titled ‘A crossbar array of magnetoresistive memory devices for in-memory computing’[1], this paper showcases Samsung’s leadership in memory technology and its effort to merge memory and system semiconductors for next-generation artificial intelligence (AI) chips. [1] https://www.nature.com/articles/s4158... In the standard computer architecture, data is stored in memory chips and data computing is executed in separate processor chips. In contrast, in-memory computing is a new computing paradigm that seeks to perform both data storage and data computing in a memory network. Since this scheme can process a large amount of data stored within the memory network itself without having to move the data, and also because the data processing in the memory network is executed in a highly parallel manner, power consumption is substantially reduced. In-memory computing has thus emerged as one of the promising technologies to realize next-generation low-power AI semiconductor chips. ✓ 00:00 Samsung Electronics announced its demonstration of the world's first in-memory computing based on MRAM ✓ 00:42 The research was led by Samsung Advanced Institute of Technology (SAIT) in close collaboration with Samsung Electronics Foundry Business and Semiconductor R&D Center ✓ 01:49 In-memory computing has thus emerged as one of the promising technologies to realize next-generation low-power AI semiconductor chips. ✓ 02:35 The Samsung Electronics researchers have provided a solution to this issue by an architectural innovation ✓ 03:32 This work expands the frontier of next-generation low-power AI chip technologies. #SamsungElectronics #MRAM #Inmemorycomputing