S10-E3_Compound Semiconductors webinar series_SiGe BiCMOS technologies and PDKs for RF applications скачать в хорошем качестве

S10-E3_Compound Semiconductors webinar series_SiGe BiCMOS technologies and PDKs for RF applications

Silicon Germanium Bipolar Complementary Metal-Oxide-Semiconductor (SiGe BiCMOS) combines SiGe transistors with bipolar and CMOS components. This technology provides high-speed, low-noise performance, making it ideal for applications like wireless communications, radar, and high-frequency analog circuits. In this webinar, we will provide an introduction to SiGe technologies and zoom in on IHP, accessible via EUROPRACTICE. IHP offers research partners and customers access to its high-performance SiGe BiCMOS technologies with dedicated integrated RF modules. IHP’s portfolio includes the world’s fastest integrated SiGe heterobipolar transistors (HBTs). We will present an overview of professional Process Design Kits (PDKs) for IHP’s SiGe BiCMOS and show the first design studies of sub-THz LNA and power amplifiers, with a particular focus on future wireless communication and high-speed optical transmission systems. After that, we’ll delve further into cryogenic temperatures domain (down to 4 Kelvin), where ASICs in SiGe BiCMOS technologies can be used to control qubits in quantum computers, support astronomical detectors and operate space-borne applications. We will show the performance of SiGe device at 4 Kelvin and results of benchmark circuits using the first Cryo-PDK version. To conclude, we will discuss the first open-source SiGe BiCMOS process and PDK. We will outline a roadmap for an analog and RF design flow using open-source tools to encourage the use of this PDK in research and educational programs, fostering innovation and knowledge dissemination.